Abstract
We report the properties of novel gate dielectric TaOxNy prepared by low-pressure chemical vapor deposition using Ta(OC2H5)5 and NH3. The metal-oxide-semiconductor (MOS) characteristics of TaOxNy/SiO2 gate dielectric are compared with those of Ta2O5/SiO2 stack gated with a W/WN electrode. The flat-band voltage shift (ΔVfb) of TaOxNy in comparison with Ta2O5 is -0.17 V due to the nitrogen-induced positive charges accumulated at the SiO2/Si interface. The interface state density of W/WN/TaOxNy/SiO2/p-Si nMOS capacitors as determined by the conductance method is in the 0.85–1.5×1011 eV-1 cm-2 range near the Si midgap. The leakage current level of the TaOxNy/SiO2/p-Si MOS capacitor is ∼-10 nA/cm2 at -2.5 V at the effective oxide thickness (Teff) of 31 Å. The leakage current is four to five orders of magnitude lower than that of poly-Si-gated SiO2 in the -2–-3 V range. The reliable characteristics of TaOxNy over Ta2O5 in terms of a smaller increase in Teff and excellent breakdown field against selective oxidation at 950°C allow us to maintain the standard complementary metal-oxide-semiconductor fabrication process and technology.
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