Abstract
MOSFET's with equivalent oxide thickness of 8-12 /spl Aring/ have been demonstrated by using high-K gate dielectric thin films (HfO/sub 2/) and TaN gate electrode. Both self-aligned (higher thermal budget process) and non-self-aligned process (low thermal budget as in the replacement gate process) were used and compared. Excellent electrical characteristics (e.g. S/spl sim/68 mV/dec) and reliability characteristics (e.g. high E/sub BD/, low charge trapping and SILC) were also obtained.
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