Abstract
Carrier surface recombination characteristics are investigated in silicon high voltage diodes with glass isolated grooves by microwave probed photoconductivity transients (MW-PCT) combining different excitation depths within the layered device structures. Comparative analysis of recombination parameters in the device isolation grooves and layered wafers passivated by iodinenethanol solutions is performed to evaluate surface recombination rates. It has been revealed that electrochemical etchingnglass melting steps involved within the passivation technological procedures for fabrication of diode isolation grooves induce a decrease of surface recombination velocity from 3¢10 3 to 10 cm=s.
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