Abstract
We have investigated the interfacial and electrical properties of metal-ferroelectric-insulator-semiconductor capacitors with SrBi2Ta2O9 ferroelectric films grown on ZrO2 buffer layer coated Si. Interfacial and surface roughness parameters of heterostructures were extracted from the simulation of specular x-ray reflectivity data. For as-deposited film, no interfacial layer is found between SBT and ZrO2 from simulation data, however, an accurate fit can only be possible if a thin SiO2 layer is assumed at ZrO2/Si interface. On annealing, the formation of an inhomogeneous interfacial layer between SBT/ZrO2 interfaces having thickness 1.3 nm is observed.
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