Abstract
AbstractGaAsSb (N) superattices (SLs) grown on InP substrates using metalorganic vapor phase epitaxy are investigated by high resolution X-ray diffraction (XRD), low temperature photoluminescence (PL), and high resolution transmission electron microscopy (TEM). XRD shows very sharp satellite peaks and pendellosung fringes, which indicates excellent crystalline quality and abrupt interfaces in the GaAsSb (N)/InP SL, with Sb varies with 0.2 to 0.7. Low temperature PL shows clearly different features between the 25% Sb and 44% Sb samples. A band alignment difference is proposed to explain these behaviors. Experimental data establishes that the transition from a type-I to a type-II heterostructure occurs for a Sb-content of approximately 40%, which agrees well with the prediction by Model Solid Theory. While N incorporation degrades the PL intensity, it also provides the greater electron confinement needed to achieve mid-IR emission from GaAsSbN/GaAsSb type-II QWs
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