Abstract
Strain compensated 1.3 μm InAsP/InGaAsP laser structures have been grown by using gas source MBE and the ridge waveguide laser diodes have been fabricated. The temperature characteristics of those laser chips have been investigated in detail. The ridge type laser chips show threshold current about 10 mA at room temperature, with slope efficiency greater than 0.35 W/A/un-coated facet. The characteristic temperature of the threshold current were greater than 90 K from 25°C to 90°C. The spectral and far field characteristics of those laser chips also have been investigated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
