Characteristics of SiO2-Like Thin Film Deposited by Atmospheric-Pressure PECVD Using HMDS ∕ O2 ∕ Ar

Abstract

-like thin films were deposited at low temperatures by atmospheric-pressure plasma-enhanced chemical vapor deposition using a pin-to-plate-type dielectric barrier discharge with a gas mixture containing hexamethyldisilazane . The deposition rate increased with increasing concentration of HMDS in the gas mixture. However, a powdery film with bonding, high roughness, and low transmittance was obtained, which was attributed to the enhanced homogeneous reaction with increasing HMDS. The increase in flow rate at a fixed HMDS flow rate increased the reaction rate of the remaining HMDS on the substrate surface, which resulted in an increase in deposition rate until the remaining HMDS had completely reacted. An increase in the oxygen flow rate also increased the surface roughness and decreased the optical transmittance slightly, possibly due to the formation of small particles in the gas phase during the dissociation of the gas mixture under high-oxygen-percentage conditions. At the optimum condition of HMDS (2 slm), smooth -like thin films with a transmittance could be obtained with a deposition rate of approximately .