Abstract
We have grown AlN films on Ru(0 0 0 1) substrates using a low-temperature growth technique with pulsed laser deposition. We found that AlN(0 0 0 1) grows epitaxially on Ru(0 0 0 1) with an in-plane epitaxial relationship of AlN[ 1 1 2 ¯ 0 ]//Ru[ 1 1 2 ¯ 0 ]. Electron backscattering diffraction observations revealed that neither 30° rotational domains nor cubic phase domains were present in the AlN films and the full-width at half-maximum of the distribution in the AlN[0 0 0 1] crystalline orientation was 0.56°. Spectroscopic ellipsometry measurements showed that the AlN/Ru hetero-interface was quite abrupt, which is important for fabrication of high-frequency film bulk acoustic resonators.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
