Abstract
Silicon solar cells are fabricated by non-mass-analyzed ion implantation using 100% PH3 discharge gas. The energy conversion efficiency of cells fabricated by implantation at 5–10 keV is 10% without anti-reflection coating. Cell efficiency decreases as ion energy or total ion dose is increased. This decrease in cell efficiency is attributed to the detrimental effect of H+ ion. This is mainly because the damage created by co-implanted H+ ions is not completely annealed out.
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