Abstract
We have studied the effect of plasma excitation frequency on the properties of plasma-enhanced chemical vapor deposition silicon nitride films. The use of two radio-frequency sources, one at 270 kHz and the other at 13.56 MHz, enabled us to vary film properties such as stress by altering the amount of power supplied by each source. The low-frequency excitation was seen to favor the formation of N—H bonds in the deposited film. The relative amounts of N—H and Si—H bonds in the film were found to determine many of the film properties such as stress, conduction and wet etch rate.
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