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Abstract
Nanocrystal floating gate memory employing an amorphous carbon (a-C)/SiO2 double-layered tunnel barrier was fabricated. The band gap of a-C and conduction band discontinuity between a-C and Si was estimated to be 1.95 and 0.4 eV, respectively. In addition, interface states density of the a-C/SiO2/channel Si was estimated from the capacitance–voltage measurement. The nanocrystal memory using this tunnel barrier exhibited enhanced charge retention than that employing a single SiO2 tunnel barrier whereas the injection efficiency is comparable between them, which is due to the asymmetrical band profile of the tunnel barrier.
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