Abstract

SiO2nanoparticles in PCVD process were investigated by SEM, TEM, and optical emission spectra (OES). There are large spherical SiO2particles with diameter of 50–200 nm and more small particles about 10–50 nm in PCVD process. Size of SiO2particles is influenced by distance and feeding speed but not electron temperature. The amount of large spherical SiO2particles decreases with the increase of distance and decrease of feeding speed due to lower concentration. In addition, the evolution of SiO2particles was inferred from the experimental results.

Highlights

  • The technology of plasma chemical vapor deposition (PCVD)[1] synthesizing silica glass uses atmospheric pressure high frequency induction plasma as heat source and high purity silicon tetrachloride as raw material

  • The stage of SiO2 nanoparticles forming, colliding, aggregating, and depositing onto substrate is the key step in PCVD process, and size and morphology of the particles influence quality of silica glass [3]

  • The objective of the present study is to investigate characteristics of SiO2 particles in PCVD and understand evolution of SiO2 particles in plasma flame

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Summary

Introduction

[1] synthesizing silica glass uses atmospheric pressure high frequency induction plasma as heat source and high purity silicon tetrachloride as raw material. (metallic impurities < 1 ppm, OH-groups < 1 ppm) due to unpolluted and water-free heat source and raw material. It is the key material in inertial navigation and optical field due to its high purity and unbroken structural network. The stage of SiO2 nanoparticles forming, colliding, aggregating, and depositing onto substrate is the key step in PCVD process, and size and morphology of the particles influence quality of silica glass [3]. Investigation of SiO2 particles in PCVD process can help us to improve quality of silica glass and depositing efficiency and reduce consumption of energy and raw materials. Ulrich and coworkers [4–7] studied synthesis of SiO2 nanopowders in hydrocarbon flames and related particle size to residence time and precursor concentration and process temperature

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