Characteristics of Silicon Dioxide Films on Patterned Substrates Prepared by Atmospheric‐Pressure Chemical Vapor Deposition Using Tetraethoxysilane and Ozone

Abstract

Atmospheric‐pressure chemical vapor deposition of silicon dioxide films, using tetraethoxysilane and ozone sources, can produce a flowing‐like step coverage on a patterned substrate. We evaluate the characteristics of silicon dioxide films deposited on a patterned substrate and compare them with those on a flat surface. Thermal desorption spectroscopy detects synchronous m/e = 48 and m/e = 64 fragments only in silicon dioxide films deposited on patterned substrate. The spectral change for the m/e = 32 fragment is also detected. The contaminants, which desorb the parent species of m/e = 48 and m/e = 64 fragments during thermal desorption spectrometry, are localized in the bottom corner of the steps on patterned substrates. In Fourier transform infrared spectra of the film on patterned substrates, the peak attributed to the Si‐O stretching vibration mode shifts and spreads to lower wave numbers.