Abstract
The characteristics of ruthenium (Ru) contact to boron doped diamond (BDD) have been investigated before and after annealing. The properties of as-deposited Ru contacts to BDD showed non-linear trend. Interestingly, the contact properties of Ru/BDD exhibited ohmic contact behavior after post-annealing at 500 °C. The specific contact resistance (ρc) of Ru/BDD was 2.3 × 10−4 Ω·cm2 after annealing at 500 °C for 20 min in the argon (Ar) ambient. The contact barrier height was 0.075 eV ± 0.14 eV after annealing at 500 °C, evaluated by X-ray photoelectron spectroscopy (XPS).
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