Abstract
The characteristics of Ru etching using O2/Cl2 plasmas were investigated by employing inductively coupled plasma (ICP) etcher and helicon etcher. The changes in the Ru etch rate, Ru to SiO2 etch selectivity and Ru electrode etching slope with varied process variables were scrutinized. A high etching slope and a smooth surface after etching were attained using O2/Cl2 inductively coupled plasma. We discovered that the Ru surface etched using O2/Cl2 plasma contains a lesser amount of the O element than when using O2 plasma.
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