Abstract
A novel tunneling field effect transistor (TFET) with a recess channel is proposed. Proposed TFET has a thin intrinsic region and it is formed in the shape of surrounding the gate. The performance of the proposed device is analyzed through comparison with double gate thin intrinsic TFET (DGTI) TFET and double gate (DG) TFET structures. The comparison results of on-current (ISUBon/SUBSUB/SUB) and subthreshold swing (S) with other devices shows that the proposed device has excellent characteristics. The effects of the structural parameters change of the device on the proposed device are analyzed and compared with the other two TFET structures. A guideline for the optimization of the proposed device is suggested.
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