Abstract
An experimental investigation was made of the emission characteristics of GaSb/GaAlAsSb injection heterolasers in the temperature range from –70°C to +70°C. A study was made of the relationship between the temperature dependences of the threshold current and of the differential quantum efficiency, on the one hand, and the temperature-induced changes in the near-field pattern and in the internal parameters of the lasers, on the other. Continuous stimulated emission was achieved right up to –10°C.
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