Abstract
ABSTRACTPt/Sr0.85Bi2.4Ta2O9/Al2O3/Si structures were prepared for MFIS-FET applications. After depositing Al2O3 film of 10-50 nm thickness by reactive sputtering on Si(100) substrate as a buffer layer, Sr0.85Bi2.4Ta2O9 (SBT) thin film of 400 nm thickness was prepared onto it by metalorganic decomposition process. With annealing at 800°C for 1 hour in oxygen ambient, the 400 nm-thick SBT film exhibited 2Pr of 10.2 μC/cm2 and Ec of 37.5 kV/cm at ±5V. C-V characteristics of the Pt/SBT/Al2O3/Si structures exhibited hysteresis loops due to the ferroelectric switching behavior of the SBT film. When the Al2O3 buffer layer was thicker than 10 nm, the memory window and maximum capacitance of the Pt/SBT/Al2O3/Si structure increased with decreasing the thickness of the Al2O3buffer layer, and the Pt/SBT(400 nm)/Al2O3(10 nm)/Si structure exhibited a memory window of 2.2 V at ±5 V.
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