Abstract
A high-performance shallow junction diode formed with a stacked-amorphous-silicon (SAS) film is presented. Since the boundaries of stacked silicon layers and the poly/mono silicon interface act as a diffusion barrier for implanted dopants, the junction depth of SAS emitter contacted diode is about 500 AA shallower than that of the as-deposited polysilicon emitter contacted diode. The fabricated SAS emitter contacted diodes exhibited a very low reverse leakage current ( >
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