Abstract
Piezoresistive flow sensors with four different types of micro-cantilever structures were fabricated by using (100), n/n+/n three-layer silicon wafer and their characteristics were investigated. Piezoresistors were formed through boron diffusion and its value was about 1 kΩ. Three dimensional micro-cantilevers were fabricated by porous silicon micromachining technique and the cantilevers were curled by annealing at 450°C. Wheatstone bridge was formed with two piezoresistors and two fixed resistors in order to measure the output response of the fabricated sensor. The output voltage was increased with increasing cantilever length while the detectable measurement range was extended with decreasing length of micro-cantilever. The output voltage of the fabricated sensors was increased with the quotient of 3.2 of the flow rate.
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