Abstract
ABSTRACT A piezoelectric microspeaker was fabricated on the 5 × 5 mm2 diaphragm with highly c-axis oriented ZnO thin film on a heavily compressive-stressed silicon-nitride film. Four masks were used in the fabrication processes of the piezoelectric microspeaker. 0.5 μ m-thick piezoelectric ZnO film was deposited by RF-magnetron sputtering method on an Al bottom electrode. Then, 0.2 μ m-thick Al film was deposited for the top electrode. To enhance the ZnO film quality for improving the microspeaker performance, two-step deposition technique was adopted. The back-side silicon nitride was patterned, and silicon substrate was removed to make a diaphragm. The speaker output pressure level (SPL) of the fabricated microspeaker was measured with the variation of sinusoidal input frequency and compared to that of the commercial piezo-ceramic speaker. The largest SPL of the microspeaker was about 92 dB at the input voltage of 6Vpeak-to − peak, which was measured at the distance of 3 mm from the microspeaker in open field. The SPL of microspeaker was nearly same as that of a commercial piezo-ceramic speaker.
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