Abstract
We studied on the oxygen diffusion in two kinds of Al implanted ZnO samples (100 keV, 4 × 1014 ions/cm2). Parts of samples were annealed to diffuse simultaneously Al and Li impurity, and then same concentration distribution of Al and Li were observed. Through the oxygen diffusion experiments, the feature of bulk diffusion in the pre-annealed samples was separated at 950°C so that the large activation energy for bulk diffusion was observed below the pre-annealing temperature. Oxygen diffusion feature was explained as result from interaction between Al and Li for the pre-annealing.
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