Abstract
The letter describes asymmetric threshold-switching phenomena observed on thin films of Te40As37Ge7Si18 (0.2–1.9 μ), deposited by flash evaporation on crystalline Ge, and surface probed by means of a pyrolytic graphite counterelectrode. ``Dynamically tristable'' systems can be made in this way. The asymmetries are reversed for n- and p-type Ge. Suitably biased systems can be switched by illumination. The differences between the present results and those obtained on conventional threshold switches with two graphite electrodes call for an interpretation in terms of electronic-interface phenomena.
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