Abstract
Recently, resistive random access memory (RRAM) using various metal oxides (i.e., SiO 2 [1], HfO 2 , NiO[2], Al 2 O 3 , NbO) have attracted a lot of attentions since the current nonvolatile memory (NVM) approaching the scaling limits. Meanwhile, the selector devices are essential to address the sneak path issue which causing the reading errors in high-packing-density cross-bar RRAM array. Several types of selector devices with threshold switching (TS) behavior has been investigated, such as rectifying diode[3], varistors[4], ovonic TS (OTS)[5], metal-insulator transition (MIT)[6] etc. In this work, the characteristics of electrically driven MIT (E-MIT) in both Nb-doped SrTiO 3 and HfO 2 -based selector devices has been investigated.
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