Abstract
Metal-oxide-semiconductor field-effect transistor (MOSFET) memory devices with silicon-nanocrystal-based floating gates on a narrow channel have been fabricated. Electrical measurements have been performed in the temperature range of 20–300 K for devices of various channel dimensions. Large threshold voltage shifts are obtained, being obviously dependent on channel width, and independent of channel length. It is experimentally found that the threshold voltage shift and charge retention characteristics are almost independent of temperature. Furthermore, single electron charge/discharge processes are observed in the device with the narrowest channel.
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