Abstract
A nano electron source was fabricated using electron beam-induced deposition. Characteristics of a nano electron source fabricated using beam assisted processes were investigated by current–voltage measurement. The emission current was observed at a gate voltage of 25 V and showed a linear dependence in Fowler–Nordheim plots. An emission half-angle of about 9.8° was obtained.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Paper Title
Journal
Date
