Abstract
AbstractSince a power MOS‐FET has a reverse diode located internally between the drain and source, when a PWM inverter is constructed with MOS‐FETs, a shunt phenomenon occurs between the upper and lower arms due to the recovery current of this internal diode. This phenomenon can effectively be prevented by limiting the current rise by an inductance. In this work, a PWM inverter with around 1 kW has been realized which operates with a high carrier frequency of about 100 kHz by using a close‐coupled inductor. Furthermore, as a design guideline for a PWM inverter, an analysis is made of the loss of each device and inverter efficiency and the experimental results are compared.
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