Abstract
Single quantum well GaAs/AlGaAs lasers with n-type modulation-doped active regions are investigated. The effects of modulation doping on transparency current density and threshold current density are determined and compared to single quantum well lasers with conventional profiles. Modulation doping reduces transparency current density, thereby also reducing threshold current density. Quantum well lasers with electron sheet concentrations of 6×1011 cm−2 reduce threshold current densities by 30%, to low values of less than 150 A/cm2 for long cavities. Lasers with sheet carrier concentrations of 2.4×1012 cm−2 lase on the second quantized state. No degradation of laser performance is observed due to the location of the electrical junction 1000 Å away from the active region or due to free-carrier absorption loss.
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