Abstract
Thin film characteristics of mixed oxides and nanolaminates formed by atomic layer deposition were studied using transmission electron microscopy (TEM), atomic force microscopy, X-ray reflectometry, and metal oxide semiconductor capacitors. The role of underlayer and the impact of the location of in gate dielectrics were also investigated. Some differences in grain-size distribution were observed between mixed oxides and nanolaminates. In mixed oxide films, the grains became smaller and clustered together to form elongated structures as is added. For nanolaminates, the grains became smaller than but they did not form elongated structures. Cross-sectional TEM showed that as-deposited films were amorphous with a thinner interfacial layer than that of . After annealing, films became rougher, with an increase in interfacial layer thickness. A minimum of of was needed as an underlayer to obtain well-behaved electrical characteristics. Capacitance-voltage stressing performed on these films showed improved charge trapping behavior for mixed oxide and nanolaminate structures.
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