Abstract
We present the design and development of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a 4-inch Si wafer. The GaN HEMT devices demonstrate a maximum drain current of 900 mA/mm, a peak g/sub m/ of 300 mS/mm, and a microwave output power density of 1.5 W/mm. To the best of the authors' knowledge, these are the best results reported on GaN HEMTs on 4-inch Si wafers.
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