Abstract
In this study, metal–semiconductor–metal-structured ultraviolet (UV) photodetectors (PDs) based on pure zinc oxide (ZnO) and amorphous indium gallium zinc oxide (a-IGZO) thin films were fabricated and characterized. The ZnO seed layers were deposited on Corning glass substrates via a radio frequency (RF) magnetron sputtering technique. Results showed that under a 5 V applied bias; the dark currents of the pure ZnO and a-IGZO thin films were 0.112 pA and 2.85 nA, respectively. Meanwhile, the UV-to-visible rejection ratio of the pure ZnO and a-IGZO thin films were 14.33 and 256, respectively. Lastly, the PDs of thea-IGZO thin films had a lower leakage current and higher rejection ratio than that of the pure ZnO thin films from the UV to visible light region.
Highlights
In recent years, ultraviolet (UV) photodetectors (PDs) have played an important role in human health, ozone layer monitoring, and flame detection [1, 2]
Images shown in Figures 2(c) and 2(d), the surface roughness RMS value of the Zinc oxide (ZnO) film was 2.91 nm, and that of the aIGZO film was 0.238 nm, indicating that the overall surface of the pure ZnO film was rougher than the amorphous indium gallium zinc oxide (a-IGZO) film because of grain formation
IGZO 310 nm XRD results of the pure ZnO NRs and a-IGZO thin films that were prepared on the Corning glass substrate
Summary
Ultraviolet (UV) photodetectors (PDs) have played an important role in human health, ozone layer monitoring, and flame detection [1, 2]. Zinc oxide (ZnO) is a novel metal oxide semiconductor material that is used as an integral part of UV PDs [3, 4]. In addition to having good carrier mobility and photoelectric properties, crystalline metal oxide semiconductors are amorphous oxide semiconductor materials and have attracted considerable attention; the inclusion of ZnO compounds has led to extensive research. The type of material consists of various transition metals and oxygen atoms, such as zinc tin oxide (ZnSnO) [10], indium zinc oxide (InZnO) [11], and indium gallium zinc oxide (InGaZnO) [12], to enhance overall carrier mobility and photoelectric properties. Amorphous IGZO oxide semiconductors have high carrier mobility, good uniformity, and wide energy bandgap, which offers good transparency in the visible spectrum; its peculiar chemical bonding instigates high field mobility and displays. The difference between crystalline ZnO thinfilm PDs and amorphous IGZO thin-film PDs is discussed
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