Abstract
Characteristics of ion beam assisted etching (IBAE) for Si have been investigated by bombarding focused ion beams (FIB’s) in Cl2 gas ambient. The etched surface was analyzed by Auger electron spectroscopy (AES). It was observed that the etching rate increased with increasing the Cl2 gas pressure at low gas pressure and decreased with further increase of the Cl2 introduction. It was also observed that the etching rate depends on the scan speed of the (FIB) and decreased rapidly at a high scan speed above 500 μm/s.
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