Abstract
The characteristics of an InP/InGaAs pnp heterostructure-emitter bipolar transistor is investigated using theoretical analysis and experimental methods. Although the valence band discontinuity at the InP/InGaAs heterojunction is relatively large, the addition of a heavily-doped, as well as thin p+-InGaAs emitter layer between p-InP confinement and n+-InGaAs base layers effectively eliminates the potential spike at the emitter–base junction, lowers the emitter–collector offset voltage, and increases the potential barrier for electrons simultaneously. Experimentally, a high current gain of 88 and a low offset voltage of 54 mV could be achieved.
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