Abstract
We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) for fiber-optic applications in the 1.3 μm range. The epitaxial structures were grown on (100) GaAs substrates by MBE or MOCVD. The nitrogen composition of the InGaNAs/GaAs quantum-well (QW) active region is 0 to 0.02. Long-wavelength (up to 1.3 μm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE and MOCVD-grown VCELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In<sub>0.36</sub>Ga<sub>0.64</sub>N<sub>0.006</sub>As<sub>0.994</sub>/GaAs VCSELs. The MBE-grown devices were made with intracavity structure. Top-emitting multi-mode 1.3 μm In<sub>0.35</sub>Ga<sub>0.65</sub>N<sub>0.02</sub>As<sub>0.98</sub>/GaAs VCSELs with 1mW output power have been achieved under RT CW operation. Emission characteristics of InGaNAs/GaAs VCSELs were measured and analyzed.
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