Abstract

Gain-coupled (GC) distributed-feedback (DFB) lasers have been fabricated with AlGaAs/GaAs materials, where many advantages have been demonstrated such as excellent single-longitudinal-mode properties,1 immunity to facet reflection, resistance to external optical feedback,2 and ability to generate low chirp single-mode short optical pulses.3 As optical fibers have a minimum loss at 1.55 μm wavelength, it is important to explore GC-DFB lasers in InP based materials. Recently, we reported the fabrication of an InGaAsP/lnP GC-DFB laser with a very low threshold (12 mA) and a high side-mode suppression ratio (55 dB).4 In this paper we present the enhanced single-mode operation and the narrow linewidth of the InGaAsP/lnP GC-DFB laser.

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