Abstract
InGaAsN-GaAsSb type-II “W” quantum well structures have been grown by metalorganic chemical vapor deposition (MOCVD). Photoluminescence and X-ray diffraction measurements indicate that thin layers (2–2.5 nm) of GaAs 1− y Sb y and InGaAs 1− x N x can be grown with compositions of y = 0.3 and x = 0.0 2 . “W” structures with different N contents indicate that emission wavelengths in the 1.4–1.6 μm range can be achieved. The use of GaAs 0.85P 0.15 tensile strained barrier layers is found to significantly improve the photoluminescence intensity of the “W” structure and result in a wavelength blueshift.
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