Abstract
InGaAsN-GaAsSb type-II “W” quantum well structures have been grown by metalorganic chemical vapor deposition (MOCVD). Photoluminescence and X-ray diffraction measurements indicate that thin layers (2–2.5 nm) of GaAs 1− y Sb y and InGaAs 1− x N x can be grown with compositions of y = 0.3 and x = 0.0 2 . “W” structures with different N contents indicate that emission wavelengths in the 1.4–1.6 μm range can be achieved. The use of GaAs 0.85P 0.15 tensile strained barrier layers is found to significantly improve the photoluminescence intensity of the “W” structure and result in a wavelength blueshift.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
