Abstract
To improve the performance of metalorganic chemical vapor deposition (MOCVD)-grown long wavelength InGaAsN quantum well (QW) diode lasers emitting beyond 1.3 μm, a detailed examination of the growth parameters was performed, including DMHy/V ratio, QW growth temperature, choice of barrier material and thermal annealing temperature. This study reveals that a growth temperature in the 530–540 °C range is preferred in order to improve nitrogen incorporation and prevent degradation of the material luminescence. Increasing the DMHy/V ratio is found to be the preferred method to achieve wavelength extension. Utilization of GaAsN barrier layers, instead of GaAs barriers, suppresses the spectral blue-shift of the quantum well luminescence after thermal annealing treatment. Under optimized growth conditions, InGaAsN diode lasers emitting at 1.378 μm are realized with a threshold current density of 661 A/cm 2 and external differential quantum efficiency of 34%. Lasing wavelengths as long as 1.41 μm with a threshold current density of 1.93 kA/cm 2 are also demonstrated, representing the longest wavelength InGaAsN QW lasers realized by MOCVD.
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