Abstract
To develop bismuth-containing infrared optoelectronic devices, InGaAsBi/InP films with different lattice mismatches have been investigated. The lattice mismatch was tailored by changing the Bi content in conjunction with the In content simultaneously. X-ray diffraction analysis revealed that alloy lattice constants have been extended positively by incorporation of Bi into the crystal lattice. Electrical and optical characteristics were investigated by Hall-effect, optical absorption and photoluminescence measurements. A bandgap shrinking of about 56.4 meV/Bi% was deduced by X-ray diffraction and optical absorption measurements. From the excitation dependent photoluminescence measurement at 10 K, the donor-acceptor pair emissions were inferred for samples containing moderate and high levels of Bi. The temperature dependence of the PL peak energy is as small as 0.06 meV/K in In0.5Ga0.5As0.987Bi0.013, which is fairly low compared with that of In0.5Ga0.5As.
Highlights
Dilute bismide III-V semiconductors with wider mid-infrared wavebands have attracted much attention over the past few years since both bandgap and lattice engineerings can be achieved by incorporation of bismuth (Bi)
In this paper we report the effect of Bi concentration on the bandgap and lattice constant of In0.5Ga0.5As1-xBix grown by gas source molecular beam epitaxy (GSMBE)
It is clear that the mismatch among diffraction peaks of InGaAsBi and InP shifts with the Bi content increasing, which indicates that the lattice constant increases with the addition of Bi
Summary
Dilute bismide III-V semiconductors with wider mid-infrared wavebands have attracted much attention over the past few years since both bandgap and lattice engineerings can be achieved by incorporation of bismuth (Bi).
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