Abstract
Indium-tin oxide (ITO) films coated on glass have been etched by reactive ion etching (RIE) with a gas mixture of Ar and Cl2. The etching rates of ITO films depend strongly on power density, gas pressure, the composition of reactive gases, and the total flow rate of etchants. According to the results from the study, we can postulate that the ITO films' etching follows the ion-assisted chemical etching. A high etching rate above 100 Å/min can be achieved, and an etching mechanism will be proposed. The selectivity of ITO films to glass reaches 35 with a 30 line/mm pattern. After exposure of ITO films to an Ar/Cl2 mixed gas plasma discharge, their sheet resistance does not markedly change. The residue of Cl atoms exists only in the region near the surface. By means of parameter control, we can obtain good pattern images of ITO films measured by scanning electron microscopy (SEM).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
