Abstract
Electron cyclotron resonance (ECR) discharges of , , or were used for dry etching of Ga‐based (, , and ) and In‐based (, , , , and ) III‐V semiconductors. The effects of variations in pressure (1–20 mTorr), gas composition, and additional RF‐induced bias on the sample were examined. At least −100 V of dc bias is required to initiate etching under all conditions, with the etch rates found to be fastest with addition, followed by and then Ar. The etched surface morphologies are smooth with and discharges, but tend to become increasingly rough as the microwave power into discharges is increased, particularly with the In‐based materials. The surfaces are chemically very clean after dry etching, with no evidence of Br‐containing contamination remaining on any of the materials. The and discharges produce the smallest changes in the electrical properties of the semiconductors, while plasma exposure may cause dopant passivation and changes in barrier height under some conditions.
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