Characteristics of hydrogenated silicon thin film deposited by RF-PECVD using He–SiH 4 mixture

Abstract

Nanocrystalline silicon thin films (nc-Si:H) were deposited using He as the dilution gas instead of H 2 and the effect of the operating pressure and rf power on their characteristics was investigated. Especially, operating pressures higher than 4 Torr and a low SiH 4 containing gas mixture, that is, SiH 4(3 sccm)/He(500 sccm) were used to induce high pressure depletion (HPD) conditions. Increasing the operating pressure decreased the deposition rate, however at pressures higher than 6 Torr, crystallized silicon thin films could be obtained at an rf power of 100 W. The deposition of highly crystallized nc-Si:H thin film was related to the HPD conditions, where the damage is decreased through the decrease in the bombardment energy at the high pressure and the crystallization of the deposited silicon thin film is increased through the increased hydrogen content in the plasma caused by the depletion of SiH 4. When the rf power was set at a fixed operating pressure of 6 Torr, HPD conditions were obtained in the rf power range from 80 to 100 W, which was high enough to dissociate SiH 4 fully, but meantime low enough not to damage the surface by ion bombardment. At 6 Torr of operating pressure and 100 W of rf power, the nc-Si:H having the crystallization volume fraction of 67% could be obtained with the deposition rate of 0.28 nm/s.