Abstract
InN and In0.46Ga0.54N films are grown on sapphire with aGaN buffer by metalorganic chemical vapour deposition (MOCVD). Bothhigh resolution x-ray diffraction and high resolution transmissionelectron microscopy results reveal that these films have a hexagonalstructure of single crystal. The thin InN film has a high mobility of475 cm2V−1s−1 and that ofIn0.46Ga0.54N is 163 cm2V−1s−1.Room-temperature photoluminescence measurement of the InN film shows apeak at 0.72 eV, confirming that a high quality InN film is fabricatedfor applications to full spectrum solar cells.
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