Abstract
Simulation based study of InGaAs-GaAs tunnel- injection transistor laser having multiple quantum wells in its base, is presented. We have utilized the luttinger-kohn k.p. model to obtain the various characteristics of multiple quantum well transistor laser including band to band tunneling, free carrier loss, bound state energies, TE gain, TE spontaneous emission rate density etc. Gain and spontaneous emission are calculated by quantum well bound state energies which are obtained through the schrodinger equation. In this paper, simulations are employed to obtain the characteristics of In 0.2 Ga 0.8 As having multiple quantum wells in its base.
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