Abstract
We have investigated the tunneling magnetoresistance (TMR) in GaMnAs-based double barrier magnetic tunneling junctions (DB-MTJs) to clarify the origin of extremely low threshold current density for current-driven magnetic orientation reversal achieved in the systems. The TMR characteristics including minor loop behavior are well explained by assuming that three magnetic layers in the DB-MTJ have different coercive forces and that the uniaxial magnetic anisotropy in the middle magnetic layer is enhanced with decreasing the layer thickness. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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