Abstract
Gadolinium oxide nanocrystal (Gd 2 O 3 -NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd 2 O 3 -NC dot surrounded by amorphous Gd 2 O 3 dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd 2 O 3 -NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5 X 10 11 cm -2 . In addition, the formation of Gd 2 O 3 -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 10 4 program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd 2 O 3 nanocrystal memory.
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