Characteristics of GaAs Schottky in-plane gate quantum wire transistors for switching of quantized conductance

Abstract

Basic transport and charge control characteristics of the Schottky in-plane gate (IPG) quantum wire transistor (QWTr) were investigated experimentally and theoretically as a possible key switching device in future high-density quantum integrated circuits. The fabricated QWTrs showed one-dimensional ballistic transport. From this, use of switching between zeroth and first conductance step was proposed for logic and memory application. Experimental and theoretical investigations were made on the threshold voltage and the steepness of the first quantized conductance step, and fairly good agreements were obtained between experiment and theory.