Abstract
The ferroelectric YMnO3 and Y2O3 thin films for the Metal/Ferroelectric/insulator/Semiconductor field effect transistors (MFISFET) structure were deposited in-situ using metalorganic chemical vapor deposition (MOCVD). The C-V characteristics had a hysteresis curve with a clockwise rotation, which indicates ferroelectric polarization switching behavior. When the gate voltage sweeps from +5 to −5 V, the memory window of the Pt/YMnO3/Y2O3/Si gate capacitor annealed at 850°C in 75 mTorr(oxygen pressure) was about 1.4V. The typical leakage current density of the films annealed at 850°C in 75 mTorr(oxygen pressure) was about 10−7A/cm2 at applied voltage of 5 V.
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