Abstract
AbstractDetailed characteristics of excitonic emission in diamond have been studied by theoretical considerations taking into account the indirect semiconductor properties to calculate precise simulated spectra of the excitonic emission. The simulated excitonic emission spectra agree well with the observed spectra in our high quality diamond thin films, showing that the chemical potential of the exciton gas can be reduced precisely. The results indicate that (1) the characteristics of exciton emission of indirect semiconductors are much difference than those of direct ones, (2) exciton collisions cause line broadening and (3) quantum statistical (Bose–Einstein statistics) properties appear for highly excited exciton densities in diamond. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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