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Abstract
AbstractCharacteristics of polysilicon films, crystallized by excimer laser annealing, have been investigated. The entire amorphous silicon film of 50 mm X 50 mm has been crystallized by scanning a line shape excimer laser beam, which basically reduces the nonuniformity in the beam overlap region of the 2-dimensional scanning method. The laser beam had a Gaussian profile in the scanning direction, which ensured good crystallization by the reversible transitions between the crystalline and amorphous states and was expected to give step annealing effect The laser energy density and substrate temperature were varied.
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