Abstract
In this paper, characteristics of electrostatic discharge (ESD) protection devices operating under various ambient temperatures are investigated. The devices considered are diodes and silicon controlled rectifiers (SCRs) including Lateral SCR (LSCR) and P-Substrate Triggered SCR (PSTSCR) fabricated in a 0.35 um BCD (Bipolar-CMOS-DMOS) technology. Measurements are conducted using the Barth 4002 transmission line pulse (TLP) tester and the Signatone S1060 heating module, and the TLP I-V characteristics are analyzed in details.
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